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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BUT18 BUT18A Absolute maximum ratings (Tc=25ae ) SYMBOL VCBO PARAMETER CONDITIONS BUT18 Collector-base voltage BUT18A VCEO VEBO IC ICM IB IBM Ptot Tj Tstg INCH Base current Collector-emitter voltage ANG BUT18 EMIC ES Open emitter Open base Open collector DUC ON VALUE 850 TOR UNIT V 1000 400 V 450 9 6 12 3 6 V A A A A W ae ae BUT18A Emitter-base voltage Collector current Collector current-peak Base current-peak Total power dissipation Junction temperature Storage temperature TC=25ae 110 150 -65~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BUT18 VCEO(SUS) Collector-emitter sustaining voltage BUT18A VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A IC=0.1A; IB=0;L=25mH CONDITIONS BUT18 BUT18A SYMBOL MIN 400 TYP. MAX UNIT V 450 1.5 V VBEsat Base-emitter saturation voltage BUT18 IC=4A; IB=0.8A VCE=850V ;VBE=0 Tj=125ae VCE=1000V ;VBE=0 Tj=125ae VEB=9V; IC=0 IC=5mA ; VCE=5V IC=1A ; VCE=5V 10 10 1.3 1.0 2.0 V ICES Collector cut-off current BUT18A mA 1.0 2.0 10 35 mA IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain Switching times resistive load ton ts tf Turn-on time Storage time Fall time DC current gain HAN INC SEM GE OND IC TOR UC 35 1.0 4.0 0.8 |I |I |I s s s IC=4A; IB1=-IB2=0.8A VCC=250V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUT18 BUT18A SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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